APTGF330DA60D3G

APTGF330DA60D3G Boost chopper NPT IGBT Power Module 3 Q2 1 6 7 2 VCES = 600V IC = 330A @ Tc = 80°C Application  AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction Features  Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated  Kelvin emitter for easy drive  High level of integration  M6 power connectors Benefits  Stable temperature behavior  Very rugged  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Easy paralleling due to positive TC of VCEsat  RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 520 330 800 ±20 1560 Tj = 125°C 800A @ 520V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF330DA60D3G – Rev 2 October, 2012 Symbol VCES APTGF330DA60D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE = 15V IC = 400A Tj = 125°C VGE = VCE , IC = 7.5 mA VGE = 20V, VCE = 0V Min Typ 5.0 1.95 2.2 5.8 Max Unit 500 2.45 µA 6.5 1200 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Input Capacitance Cies Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE=15V, IC=400A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 400A RG = 8 Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 400A RG = 8 VGE = ±15V Tj = 125°C VBus = 300V IC = 400A Tj = 125°C RG = 8 VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Min Test Conditions Min 600 Typ 18 1.6 nF 1.3 µC 150 72 530 ns 40 160 75 ns 550 50 18 mJ 17 1800 A Reverse diode ratings and characteristics IRRM IF Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr VR = 600V Reverse Recovery Charge IF = 400A VGE = 0V IF = 400A VR = 300V di/dt =4400A/µs Err Reverse Recovery Energy Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C www.microsemi.com Typ Max 750 1000 400 1.25 1.2 150 250 27 44 5.6 9.2 Unit V µA A 1.6 V ns µC mJ 2-6 APTGF330DA60D3G – Rev 2 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGF330DA60D3G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight For terminals To Heatsink M6 M6 4000 -40 -40 -40 3 3 Typ Max 0.08 0.15 Unit °C/W V 150 125 125 5 5 350 °C N.m g www.microsemi.com 3-6 APTGF330DA60D3G – Rev 2 October, 2012 D3 Package outline (dimensions in mm) APTGF330DA60D3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 800 800 TJ = 125°C VGE=15V TJ=25°C 600 TJ=125°C IC (A) IC (A) 600 400 VGE=20V VGE=12V 400 VGE=9V 200 200 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 0 40 600 3 VCE (V) VCE = 300V VGE = 15V RG = 8 Ω TJ = 125°C 30 E (mJ) IC (A) 2 4 5 Energy losses vs Collector Current Transfert Characteristics 800 1 400 Eon Eoff 20 TJ=125°C Err 10 200 TJ=25°C 0 0 5 6 7 8 9 10 11 0 12 200 400 Switching Energy Losses vs Gate Resistance 50 30 Eon 800 Eoff IC (A) E (mJ) 40 800 Reverse Safe Operating Area 1000 VCE = 300V VGE =15V IC = 400A TJ = 125°C 600 IC (A) VGE (V) 20 600 400 VGE=15V TJ=125°C RG=8 Ω 200 10 Err 0 0 0 10 20 30 Gate Resistance (ohms) 40 0 100 200 300 400 500 600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.9 IGBT 0.7 0.5 0.3 0.1 0.01 0 0.00001 Single Pulse 0.05 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 4-6 APTGF330DA60D3G – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.09 APTGF330DA60D3G VCE=300V D=50% RG=8Ω TJ=125°C TC=75°C 60 50 ZVS 40 600 ZCS 30 hard switching 20 400 TJ=125°C 200 TJ=25°C 10 0 0 0 100 200 300 IC (A) 400 0 500 0.3 0.6 0.9 VF (V) 1.2 1.5 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.1 Diode 0.08 0.06 0.9 0.7 0.5 0.04 0.02 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 5-6 APTGF330DA60D3G – Rev 2 October, 2012 Thermal Impedance (°C/W) Forward Characteristic of diode 800 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70 APTGF330DA60D3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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