APTGF50A120T3WG

APTGF50A120T3WG Phase leg NPT IGBT Power Module 25 26 27 28 31 VCES = 1200V IC = 50A @ Tc = 80°C Application • Welding converters Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS compliant 4 3 13 14 15 16 NTC 8 7 18 19 20 22 32 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Pins 25/26/27/28 must be shorted together Pins 13/14/15/16 must be shorted together Pins 18/19/20/22 must be shorted together Absolute maximum ratings Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C APTGF50A120T3WG – Rev 0 May, 2009 Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Max ratings 1200 70 50 150 ±20 312 100A @ 1200V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGF50A120T3WG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V Tj = 25°C VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 3.7 6.5 100 Unit µA V V nA 3.2 4.0 4.5 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C RG = 5 Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Min Typ 3450 330 220 330 35 200 35 65 320 30 35 65 360 40 6.9 mJ 3.05 300 A Max Unit pF nC ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/µs Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C Min 1200 Typ Max 100 500 Unit V µA A V APTGF50A120T3WG – Rev 0 May, 2009 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 30 2.6 3.2 1.8 300 380 360 1700 3.1 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com 2-7 APTGF50A120T3WG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.4 1.2 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol