APTGF50DDA60T3G

APTGF50DDA60T3G Dual Boost chopper NPT IGBT Power Module 13 14 VCES = 600V IC = 50A @ Tc = 80°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS compliant Max ratings 600 65 50 230 ±20 250 100A@500V Unit V A V W July, 2006 1-6 APTGF50DDA60T3G – Rev 2 CR1 CR2 22 7 23 Q1 26 27 8 Q2 4 3 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF50DDA60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0 V VCE = 600V Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 1 mA VGE = 20V, VCE = 0 V Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A R G = 2.7Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A R G = 2.7Ω VGE = 15V Tj = 125°C VBus = 400V IC = 50A Tj = 125°C R G = 2.7Ω Test Conditions Tj = 25°C Tj = 125°C Tc = 70°C IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =200A/µs 60 1.6 1.9 1.4 130 170 220 920 Min 600 VR=600V 250 500 1.8 July, 2006 2-6 APTGF50DDA60T3G – Rev 2 Typ Max 250 500 2.45 6 400 Unit µA V V nA Unit pF 1.7 4 2.0 2.2 Dynamic Characteristics Min Typ 2200 323 200 166 20 100 40 9 120 12 42 10 130 21 0.5 Max nC ns ns mJ 1 Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Typ Max Unit V µA A V Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com APTGF50DDA60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85    T − T    25  T: Thermistor temperature Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.5 0.9 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol