APTGF50VDA60T3G
Dual Boost Chopper NPT IGBT Power Module
13 14
VCES = 600V IC = 50A @ Tc = 80°C
Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction (PFC) • Interleaved PFC
19 22
20 23
10 7
11 8
26 27
4 3
29 15
30 NTC
31
32 16
Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS compliant
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
September, 2009 1–6 APTGF50VDA60T3G – Rev 1
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
Max ratings 600 65 50 230 ±20 250 100A @ 500V
Unit V A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGF50VDA60T3G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.45 6 400 Typ 2200 323 200 166 20 100 40 9 120 12 42 10 130 21 0.5 mJ 1 225 A Max Unit µA V V nA Unit pF
1.7 4
2.0 2.2
Dynamic Characteristics
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω VGE = 15V Tj = 125°C VBus = 400V IC = 50A Tj = 125°C RG = 2.7Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Min
nC
ns
ns
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25°C Tj = 125°C Tc = 70°C IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =200A/µs
Min 600
Typ
Max 250 500
Unit V µA A
September, 2009 2–6 APTGF50VDA60T3G – Rev 1
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
60 1.6 1.9 1.4 130 170 220 920
1.8 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
www.microsemi.com
APTGF50VDA60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C
RT = R25 ⎡ ⎛1 exp ⎢ B25 / 85 ⎜ ⎜ T − T ⎟⎥ ⎟ ⎝ 25 ⎠⎦ ⎣
T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T
Min
Typ 50 5 3952 4
Max
Unit kΩ % K %
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Chopper Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.5 0.9 150 125 100 4.7 110 Unit
°C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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