APTGF660U60D4G

APTGF660U60D4G Single switch NPT IGBT Power Module 1 VCES = 600V IC = 660A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • M6 connectors for power • M4 connectors for signal • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant 3 5 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 600 860 660 1320 ±20 2800 1600A@520V Unit V A V W July, 2008 1-5 APTGF660U60D4G – Rev 2 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF660U60D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C Tj = 25°C VGE = 15V IC = 800A Tj = 125°C VGE = VCE , IC = 16mA VGE = 20V, VCE = 0V Min Typ Max 500 1 2.45 6.5 2400 Unit µA mA V V nA 4.5 1.95 2.2 5.5 Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=800A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 800A RG = 16Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 800A RG = 16Ω VGE = ±15V Tj = 125°C VBus = 300V IC = 800A Tj = 125°C RG = 16Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Min Typ 36 3.2 2 150 72 530 40 160 75 550 50 36 33 3600 mJ mJ A ns Max Unit nF µC ns Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 800A VR = 300V IF = 800A VGE = 0V Test Conditions VR = 600V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 600 Typ Max 750 1000 800 1.25 1.2 150 250 57 80 11.6 22.8 1.6 Unit V µA A V July, 2008 2-5 APTGF660U60D4G – Rev 2 ns µC mJ di/dt =7000A/µs www.microsemi.com APTGF660U60D4G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 2500 -40 -40 -40 3 1 Min Typ Max 0.044 0.085 150 125 125 5 2 350 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol