APTGF75DH120T3G

APTGF75DH120T3G Asymmetrical - Bridge NPT IGBT Power Module 13 14 VCES = 1200V IC = 75A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Q1 CR1 18 CR3 22 19 23 7 8 Q4 CR2 CR4 4 3 29 15 30 31 32 16 R1 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS compliant 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 100 75 150 ±20 500 150A @ 1200V Unit V A V W April, 2009 1-5 APTGF75DH120T3G – Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF75DH120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE, IC = 2.5 mA VGE = ±20V, VCE = 0V Min Typ Max 250 500 3.7 6.5 ±500 Unit µA V V nA 3.2 3.9 4.5 Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=75A VCE=600V Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 75A Tj = 125°C RG = 7.5Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Min Typ 5.1 0.7 0.4 0.8 120 50 310 20 130 60 360 30 9 mJ 4 450 A Max Unit nF µC ns ns Diode ratings and characteristics (CR2 & CR3) Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/µs Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C Min 1200 Typ Max 100 500 60 2.5 3 1.8 265 350 560 2890 3 V Unit V µA A April, 2009 2-5 APTGF75DH120T3G – Rev 0 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Reverse Recovery Time Reverse Recovery Charge ns nC CR1 & CR4 are IGBT protection diodes only www.microsemi.com APTGF75DH120T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.25 0.9 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol