APTGF75H120TG_10

APTGF75H120TG Full - Bridge NPT IGBT Power Module VBUS Q1 Q3 VCES = 1200V IC = 75A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 G3 E1 Q2 OUT1 OUT2 Q4 E3 G2 G4 E2 NTC1 NTC2 E4 0/VBU S Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant G3 E3 G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 100 75 150 ±20 500 150A @ 1200V Unit V A V W APTGF75H120TG – Rev 3 February, 2010 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF75H120TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE, IC = 2.5 mA VGE = ±20V, VCE = 0V Min Typ Max 250 500 3.7 6.5 ±500 Unit µA V V nA 3.2 3.9 4.5 Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=75A VCE=600V Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 75A Tj = 125°C RG = 7.5Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Min Typ 5.1 0.7 0.4 0.8 120 50 310 20 130 60 360 30 9 mJ 4 450 A Max Unit nF µC ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C IF = 50A VR = 600V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1200 Typ Max 250 500 Unit V µA A APTGF75H120TG – Rev 3 February, 2010 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V 50 2.1 1.9 95 190 4.2 9 1.5 3 IF = 50A V ns µC mJ di/dt =1500A/µs www.microsemi.com 2-5 APTGF75H120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C RT = R 25 ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp⎢ B 25 / 85 ⎜ ⎜ T − T ⎟⎥ ⎟ ⎢ ⎝ 25 ⎠⎥ ⎣ ⎦ T: Thermistor temperature Min Typ 50 5 3952 4 Max Unit kΩ % K % Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.25 0.6 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol