APTGF75SK60D1

APTGF75SK60D1 Buck Chopper NPT IGBT Power Module Application • • AC and DC motor control Switched Mode Power Supplies VCES = 600V IC = 75A @ Tc = 80°C Features • Non Punch Through (NPT) fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Low stray inductance - M5 power connectors High level of integration • • • 3 4 5 7 6 2 1 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25°C Tj = 125°C 150A@520V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGF75SK60D1 – Rev 0 July, 2003 TC = 25°C TC = 80°C TC = 25°C Max ratings 600 100 75 187 ±20 355 Unit V A V W APTGF75SK60D1 Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current All ratings @ Tj = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 500µA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C VGE = 15V Tj = 25°C IC = 75A Tj = 125°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 75A RG = 3Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 75A RG = 3Ω Min 600 Typ Max 500 2.45 6.5 400 4.5 1 1 1.95 2.2 5.5 Unit V µA mA V V nA Dynamic Characteristics Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Min Typ 3300 300 65 20 155 20 65 25 170 35 2.4 Max Unit pF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VF ER Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions IF = 75A VGE = 0V IF = 75A VR = 300V di/dt =800A/µs IF = 75A VR = 300V di/dt =800A/µs Min Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 1.25 1.2 2.3 5 8 Max 1.6 Unit V mJ µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol