APTGF90A60T3AG

APTGF90A60T3AG Phase leg NPT IGBT Power Module Power Module 29 30 31 32 13 VCES = 600V IC = 90A @ Tc = 100°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 4 3 Features 26 22 27 23 28 25 R1 • 8 7 16 18 19 20 14 28 27 26 25 29 30 23 22 20 19 18 16 15 • • • • • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance 31 32 2 3 4 7 8 10 11 12 14 13 Benefits • • • • • Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 100°C TC = 25°C TC = 25°C TJ = 150°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGF90A60T3AG – Rev 0 Max ratings 600 130 90 200 ±20 520 200A @ 480V Unit V A V W May, 2009 APTGF90A60T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Typ 2 2.2 5.5 Max 250 2.5 6.5 400 Unit µA V V nA 4.5 Dynamic Characteristics Symbol Characteristic Cies Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE= 15V ; VCE=300V IC=100A Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 100A RG = 2.2Ω VGE = ±15V Tj = 125°C VBus = 300V IC = 100A Tj = 125°C RG = 2.2Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Min Typ 4.3 0.4 240 25 10 130 20 25 11 150 30 1 mJ 3 450 A Max Unit nF nC ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 100°C Min 600 Typ Max 35 600 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =400A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 60 1.8 2.2 1.5 25 160 70 960 2.2 V May, 2009 2–5 APTGF90A60T3AG – Rev 0 Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com APTGF90A60T3AG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.24 0.52 150 125 100 4.7 110 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol