APTGF90DU60TG

APTGF90DU60TG Dual common source NPT IGBT Power Module VCES = 600V IC = 90A @ Tc = 80°C Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C1 Q1 G1 C2 Features • Q2 G2 Non Punch Through (NPT) Fast IGBT® E1 E2 NTC1 E NTC2 • • G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 • • Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings 600 110 90 315 ±20 416 200A @ 600V Unit V July, 2006 1-6 APTGF90DU60TG – Rev 2 - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C A V W Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF90DU60TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V Tj = 25°C VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 90A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0 V Min Typ Max 250 500 2.5 5 ±150 Unit µA V V nA 2.0 2.2 3 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 90A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω VGE = 15V Tj = 125°C VBus = 400V IC = 90A Tj = 125°C RG = 5 Ω Min Typ 4300 470 400 330 290 200 26 25 150 30 26 25 170 40 4.3 Max Unit pF nC ns ns mJ 3.5 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=600V IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =400A/µs Tj = 25°C Tj = 125°C Tc = 70°C Min 600 Typ Max 350 600 Unit V µA A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 260 1400 ns nC www.microsemi.com 2-6 APTGF90DU60TG – Rev 2 July, 2006 Tj = 125°C 60 1.6 1.9 1.4 1.8 V APTGF90DU60TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.3 0.65 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol