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APTGF90SK60D1G

APTGF90SK60D1G

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    D1

  • 描述:

    IGBT 600V 130A 445W D1

  • 数据手册
  • 价格&库存
APTGF90SK60D1G 数据手册
APTGF90SK60D1 Buck Chopper NPT IGBT Power Module VCES = 600V IC = 90A @ Tc = 80°C Application • • AC and DC motor control Switched Mode Power Supplies Features • • • • 4 5 7 6 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 600 130 90 220 ±20 445 Tj = 125°C 200A@480V TC = 25°C TC = 80°C TC = 25°C Unit V A V W July, 2003 1 2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGF90SK60D1 – Rev 0 3 Non Punch Through (NPT) fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Low stray inductance - M5 power connectors High level of integration APTGF90SK60D1 ICES All ratings @ Tj = 25°C unless otherwise specified Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Fall Time Turn-on Delay Time Tr Td(off) Turn-off Delay Time Fall Time Eoff Turn off Energy Symbol Characteristic Diode Forward Voltage ER Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 2.2Ω Min Test Conditions IF = 100A VGE = 0V IF = 100A VR = 300V di/dt =800A/µs IF = 100A VR = 300V di/dt =800A/µs TJ TSTG TC Torque Wt 1 1 1.95 2.2 500 4.5 Typ 4300 400 25 2.45 Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol
APTGF90SK60D1G 价格&库存

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