APTGF90VDA60T3G

APTGF90VDA60T3G Dual Boost chopper NPT IGBT Power Module 13 14 VCES = 600V IC = 90A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction (PFC) • Interleaved PFC 19 22 20 23 10 7 11 8 26 27 4 3 29 15 30 NTC 31 32 16 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS compliant Max ratings 600 110 90 200 ±20 416 200A @ 600V Unit V A V W 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C September, 2009 1-5 APTGF90VDA60T3G – Rev 0 Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF90VDA60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Typ 2 2.2 5.5 Max 250 2.5 6.5 400 Unit µA V V nA 4.5 Dynamic Characteristics Symbol Characteristic Cies Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE= 15V ; VCE=300V IC=100A Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 100A RG = 2.2Ω VGE = ±15V Tj = 125°C VBus = 300V IC = 100A Tj = 125°C RG = 2.2Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Min Typ 4.3 0.4 240 25 10 130 20 25 11 150 30 1 mJ 3 450 A Max Unit nF nC ns ns Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt =200A/µs Min 600 Typ Max 100 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=600V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 160 220 290 1530 ns nC www.microsemi.com 2-5 APTGF90VDA60T3G – Rev 0 September, 2009 100 1.6 2 1.3 2 V APTGF90VDA60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C RT = R25 ⎡ ⎛1 exp ⎢ B25 / 85 ⎜ ⎜ T − T ⎟⎥ ⎟ ⎝ 25 ⎠⎦ ⎣ T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T Min Typ 50 5 3952 4 Max Unit kΩ % K % Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Chopper Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.3 0.55 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol