APTGL120TA120TPG

APTGL120TA120TPG Triple phase leg Trench + Field Stop IGBT4 Power module VBUS1 VBUS2 VBUS3 NTC1 G1 E1 U G2 G4 G3 E3 V G6 G5 E5 W VCES = 1200V IC = 120A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Max ratings 1200 140 120 200 ±20 517 200A @ 1150V Unit V A V W July, 2009 1-5 APTGL120TA120TPG – Rev 0 R1 E2 E4 E6 NTC2 0/VBUS1 0/VBUS2 0/VBUS3 VBUS 1 VBUS 2 VBUS 3 G1 NTC1 NTC2 0/VBUS 1 E1 E2 G2 0/VBUS 2 G3 E3 E4 G4 0/VBUS 3 G5 E5 E6 G6 U V W Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGL120TA120TPG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 100A Tj = 150°C VGE = VCE , IC = 3.4mA VGE = 20V, VCE = 0V Min Typ 1.8 2.15 5.8 Max 250 2.15 6.5 600 Unit µA V V nA 5.2 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=100A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 7.5Ω Inductive Switching (150°C) VGE = ±15V VBus = 600V IC = 100A RG = 7.5Ω TJ = 25°C VGE = ±15V TJ = 150°C VBus = 600V IC = 100A TJ = 25°C RG = 7.5Ω TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Min Typ 6.2 0.4 0.35 0.85 130 20 300 45 150 35 350 80 5 10.5 5.5 9.5 400 ns Max Unit nF µC ns mJ mJ A Chopper diode ratings and characteristics Symbol VRRM IRM IF VF trr Qrr Err Characteristic Maximum Peak Repetitive Reverse Voltage Test Conditions VR=1200V IF = 100A VGE = 0V Tj = 25°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 1200 Typ Max 250 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy di/dt =2400A/µs 20 3.4 8 mJ www.microsemi.com 2-5 APTGL120TA120TPG – Rev 0 IF = 100A VR = 600V 300 9.3 ns µC July, 2009 120 1.9 1.85 155 Unit V µA A V 2.4 APTGL120TA120TPG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.29 0.5 175 125 100 5 250 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol