APTGL180A120T3AG

APTGL180A120T3AG Phase leg Trench + Field Stop IGBT4 Power Module 29 30 31 32 13 VCES = 1200V IC = 180A @ Tc = 100°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated • Very low stray inductance • Kelvin emitter for easy drive • Internal thermistor for temperature monitoring • High level of integration • AlN substrate for improved thermal performance 4 3 26 22 27 23 28 25 R1 8 7 16 18 19 20 14 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Benefits • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together Absolute maximum ratings TC = 25°C TC = 100°C TC = 25°C TC = 25°C Tj = 125°C March, 2011 1-5 APTGL180A120T3AG – Rev 2 Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Max ratings 1200 230 180 300 ±20 940 300A @ 1100V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGL180A120T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 150°C VGE = VCE , IC = 5.5 mA VGE = 20V, VCE = 0V Min Typ 1.8 2.2 5.8 Max 300 2.2 6.5 200 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= -8V / 15V ; VCE=600V IC=150A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 150A RG = 3Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 150A RG = 3Ω VGE = ±15V TJ = 150°C VCE = 600V IC = 150A TJ = 150°C RG = 3Ω VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Min Typ 9.3 0.58 0.5 0.85 130 20 300 45 150 35 350 80 13.5 14.5 600 ns Max Unit nF µC ns mJ mJ A Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 100°C Min 1200 Typ Max 150 600 Unit V µA A V March, 2011 2-5 APTGL180A120T3AG – Rev 2 Maximum Reverse Leakage Current DC Forward Current VR=1200V 120 2.5 3 1.8 265 350 1120 5780 3 IF = 120A Diode Forward Voltage IF = 240A IF = 120A IF = 120A VR = 800V di/dt =400A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com APTGL180A120T3AG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.16 0.37 175 125 100 4.7 110 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol