APTGL40H120T1G

APTGL40H120T1G Full bridge Trench + Field Stop IGBT4 Power Module 3 Q1 5 6 Q2 7 1 Q4 9 4 Q3 CR1 CR3 2 VCES = 1200V IC = 40A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Low tail current - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant CR2 CR4 8 11 NTC 10 12 Pins 3/4 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Max ratings 1200 65 40 70 ±20 220 70A @ 1100V Unit V A April, 2009 1-5 APTGL40H120T1G – Rev 0 V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGL40H120T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 35A Tj = 150°C VGE = VCE , IC = 1.2mA VGE = 20V, VCE = 0V Min Typ 1.85 2.25 5.8 Max 250 2.25 6.5 400 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=35A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 35A RG = 12Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 35A RG = 12Ω TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 35A TJ = 25°C RG = 12Ω TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Min Typ 1950 155 115 0.27 130 20 300 45 150 35 350 80 2.6 4 2 3 140 ns Max Unit pF µC ns mJ mJ A Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 150°C Tc = 80°C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V Min 1200 Typ Max 100 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=1200V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C di/dt =200A/µs nC www.microsemi.com 2-5 APTGL40H120T1G – Rev 0 380 360 1700 ns April, 2009 30 2.6 3.2 1.8 300 3.1 V APTGL40H120T1G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C RT = R25 ⎡ ⎛1 exp ⎢ B25 / 85 ⎜ ⎜ T − T ⎟⎥ ⎟ ⎝ 25 ⎠⎦ ⎣ T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T Min Typ 50 5 3952 4 Max Unit kΩ % K % Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.68 1.2 175 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol