APTGL475DA120D3G

APTGL475DA120D3G Boost chopper Trench + Field Stop IGBT4 Power Module 3 VCES = 1200V IC = 475A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Q2 6 7 1 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 610 475 900 ±20 2080 800A @ 1100V Unit V A V W September, 2008 1-5 APTGL475DA120D3G – Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGL475DA120D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 400A Tj = 125°C VGE = VCE , IC = 15mA VGE = 20V, VCE = 0V Min Typ 1.8 2.2 5.8 Max 5 2.2 6.5 400 Unit mA V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= -8V / 15V ; VCE=600V IC=400A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 400A RG = 1Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 400A RG = 1Ω VGE = ±15V TJ = 150°C VCE = 600V IC = 400A TJ = 150°C RG = 1Ω VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Min Typ 24.6 1.62 1.38 2.3 200 40 400 70 220 50 500 80 33 42 1600 ns Max Unit nF µC ns mJ mJ A Diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 400A VR = 600V di/dt = 7000A/µs IF = 400A VGE = 0V Test Conditions VR=1200V Tj = 25°C Tj = 150°C TC = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 1200 Typ Max 250 2000 400 1.7 1.65 155 300 37.2 78 16 32 2.2 Unit V µA A V ns µC mJ September, 2008 2-5 APTGL475DA120D3G – Rev 0 www.microsemi.com APTGL475DA120D3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.072 0.14 175 125 125 5 5 350 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol