APTGL475U120DAG

APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 EK E C VCES = 1200V IC = 475A @ Tc = 100°C Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses • • • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance G CK E CK C EK G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 100°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 610 475 800 ±20 2307 800A @ 1150V Unit V A V W May, 2009 1–5 APTGL475U120DAG – Rev 1 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGL475U120DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) VGE(th) Collector Emitter Saturation Voltage Gate Threshold Voltage Test Conditions VGE = 0V ; VCE = 1200V VGE =15V Tj = 25°C IC = 400A Tj = 150°C VGE = VCE, IC = 10 mA Min Typ 1.8 2.2 5.8 Max 4 2.2 6.5 Unit mA V V 5 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff ISC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short circuit current Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 400A RG = 1.8Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 400A RG = 1.8Ω TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 400A TJ = 25°C RG = 1.8Ω TJ = 150°C VGE≤15V ; VCC=900V tp≤10µs ; Tj=150°C Min Typ 24.6 1.62 1.38 3.4 160 30 340 80 170 40 450 170 20.8 42 22 37.2 2000 ns Max Unit nF µC ns mJ mJ A Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 360A IF = 720A IF = 360A IF = 360A VR = 800V di/dt = 1200A/µs Test Conditions VR=1200V Min 1200 Tj = 25°C Tj = 125°C Tj = 90°C Typ Max 400 2000 Unit V µA A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 265 350 3.3 17.3 ns µC www.microsemi.com 2–5 APTGL475U120DAG – Rev 1 May, 2009 Tj = 125°C 360 2.5 3 1.8 3 V APTGL475U120DAG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink For teminals M6 M5 IGBT Series diode 2500 -40 -40 -40 3 2 Min Typ Max 0.065 0.13 175 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol