APTGL60DH120T3G

APTGL60DH120T3G Asymmetrical - Bridge Trench + Field Stop IGBT4 Power module 13 14 VCES = 1200V IC = 60A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS compliant Q1 CR1 18 CR3 22 19 23 7 8 Q4 CR2 CR4 4 3 29 15 30 31 32 16 R1 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Max ratings 1200 80 60 100 ±20 280 100A @ 1100V Unit V A V W May, 2009 1-5 APTGL60DH120T3G – Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGL60DH120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 150°C VGE = VCE , IC = 1.6mA VGE = 20V, VCE = 0V Min Typ 1.85 2.25 5.8 Max 250 2.25 6.5 400 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=50A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2Ω TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 50A TJ = 25°C RG = 8.2Ω TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Min Typ 2770 205 160 0.38 130 20 300 45 150 35 350 80 3.8 5.5 2.5 4.5 200 ns Max Unit pF µC ns mJ mJ A Reverse diode ratings and characteristics Symbol VRRM IRM IF VF trr Qrr Er Characteristic Maximum Peak Repetitive Reverse Voltage Test Conditions VR=1200V IF = 50A VGE = 0V Tj = 25°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C IF = 50A VR = 600V Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 1200 Typ Max 250 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy 90 1.5 1.43 155 300 4.8 10 1.7 3.6 Unit V µA A V ns µC mJ May, 2009 2-5 APTGL60DH120T3G – Rev 0 2.0 di/dt =1300A/µs www.microsemi.com APTGL60DH120T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.53 0.62 175 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol