APTGL700U120D4G

APTGL700U120D4G Single switch Trench + Field Stop IGBT4 Power Module 1 VCES = 1200V IC = 700A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated • • • • Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration 3 5 2 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 910 700 1800 ±20 3000 1200A@1150V Unit V July, 2010 1-5 APTGL700U120D4G – Rev 1 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGL700U120D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Zero Gate Voltage Collector Current ICES VCE(sat) VGE(th) Collector Emitter Saturation Voltage Gate Threshold Voltage Test Conditions VGE = 0V ; VCE = 1200V VGE =15V Tj = 25°C IC = 600A Tj = 150°C VGE = VCE, IC = 24 mA Min Typ 1.8 2.2 5.8 Max 4 2.2 6.5 Unit mA V V 5 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= -8V / 15V ; VCE=600V IC=600A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 600A RG = 1.8Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 600A RG = 1.8Ω VGE = ±15V TJ = 150°C VCE = 600V IC = 600A TJ = 150°C RG = 1.8Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 150°C Min Typ 37.2 2.3 2.04 3.4 160 30 340 80 170 40 450 170 66 66 2400 ns Max Unit nF µC ns mJ mJ A Diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 600A VR = 600V di/dt = 7000A/µs IF = 600A VGE = 0V Test Conditions VR=1200V Tj = 25°C Tj = 150°C TC = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 1200 Typ Max 250 2000 600 1.7 1.65 155 300 53 110 23.5 46 2.2 Unit V µA A V ns µC mJ July, 2010 2-5 APTGL700U120D4G – Rev 1 www.microsemi.com APTGL700U120D4G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 4000 -40 -40 -40 3 1 Min Typ Max 0.05 0.1 175 125 125 5 2 350 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol