APTGT100DA120T1G

APTGT100DA120T1G Boost chopper Fast Trench + Field Stop IGBT® Power Module 5 6 11 VCES = 1200V IC = 100A* @ Tc = 80°C Application • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Q2 CR2 9 10 1 2 3 4 Features NTC • 12 • • • Benefits • • • • • • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Internal thermistor for temperature monitoring High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 140 * 100 * 200 ±20 480 200A @ 1100V Unit V August, 2007 1–5 APTGT100DA120T1G – Rev 0 A V W Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT100DA120T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit µA V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C RG = 3.9Ω Min Typ 7200 400 300 260 30 420 70 290 50 520 90 10 mJ 10 Max Unit pF ns ns Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 100A VR = 600V IF = 100A VGE = 0V Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1200 Typ Max 250 500 100 1.6 1.6 170 280 9 18 5 9 2.1 Unit V µA A V ns µC mJ August, 2007 2–5 APTGT100DA120T1G – Rev 0 di/dt =2000A/µs www.microsemi.com APTGT100DA120T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.26 0.48 150 125 100 4.7 80 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol