APTGT100H120G

APTGT100H120G Full - Bridge Fast Trench + Field Stop IGBT® Power Module VCES = 1200V IC = 100A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Max ratings 1200 140 100 200 ±20 480 200A @ 1100V Unit V A July, 2006 1-5 APTGT100H120G – Rev 1 VBUS Q1 G1 Q3 G3 E1 OUT1 OUT2 E3 Q2 G2 Q4 G4 E2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS G2 E2 E3 G3 OUT2 E4 G4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT100H120G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0 V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit µA V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A R G = 3.9Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A R G = 3.9Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C R G = 3.9Ω Min Typ 7200 400 300 260 30 420 70 290 50 520 90 10 Max Unit pF ns ns mJ 10 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=1200V IF = 100A VGE = 0 V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C IF = 100A VR = 600V di/dt =2000A/µs Min 1200 Typ Max 250 500 Unit V µA A 100 1.6 1.6 170 280 9 18 5 9 2.1 V ns µC mJ July, 2006 2-5 APTGT100H120G – Rev 1 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C www.microsemi.com APTGT100H120G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.26 0.48 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol