APTGT100TL60T3G
Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 100A @ Tc = 80°C
Application • Solar converter • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring
28 27 26 25 29 30 23 22 20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant
All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 …
Q1 to Q4 Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Max ratings 600 150 100 200 ±20 340 200A @ 550V Unit V A V W
February, 2009 1-7 APTGT100TL60T3G – Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT100TL60T3G
All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit µA V V nA
5.0
Q1 to Q4 Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=100A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 100A Tj = 25°C RG = 3.3Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Min Typ 6100 390 190 1.1 115 45 225 55 130 50 300 70 0.4 0.875 2.5 3.5 500 0.44 Max Unit pF µC
ns
ns
mJ mJ A
°C/W
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2-7
APTGT100TL60T3G – Rev 0
February, 2009
APTGT100TL60T3G
CR1 to CR4 diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Err RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C
Min 600
Typ
Max 250 500
Unit V µA A
Maximum Reverse Leakage Current DC Forward current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance
VR=600V
IF = 75A VGE = 0V
75 1.6 1.5 100 150 3.6 7.6 0.85 1.8
2 V ns µC mJ 0.98 °C/W
di/dt =2000A/µs
IF = 75A VR = 300V
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 100A VR = 300V IF = 100A VGE = 0V Test Conditions VR=600V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 250 500 100 1.6 1.5 125 220 4.7 9.9 1.1 2.4 0.77 2 Unit V µA A V ns µC mJ °C/W
di/dt =2000A/µs
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C
RT = R25 ⎡ ⎛1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜ ⎜ T − T ⎟⎥ ⎟ ⎝ 25 ⎠⎦ ⎣
T: Thermistor temperature
Min
www.microsemi.com
3-7
APTGT100TL60T3G – Rev 0
February, 2009
Typ 50 5 3952 4
Max
Unit kΩ % K %
APTGT100TL60T3G
Thermal and package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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