APTGT150DA120TG

APTGT150DA120TG Boost chopper Fast Trench + Field Stop IGBT® Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction NT C2 CR1 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring OUT Q2 G2 E2 NT C1 G2 E2 VBUS VBUS SENSE 0/VBUS Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant OUT OUT E2 NTC2 G2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 220 150 350 ±20 690 Tj = 125°C 300A @ 1150V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2006 0/VBU S V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT150DA120TG – Rev 1 VBUS VB US SENS E VCES = 1200V IC = 150A @ Tc = 80°C APTGT150DA120TG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ 1.7 2.0 5.8 Typ 10.7 0.56 0.48 280 40 420 Max Unit 350 2.1 µA 6.5 400 V nA Max Unit nF ns 290 45 520 ns 90 14 mJ 16 Typ Max 1200 Tj = 25°C Tj = 125°C IF = 150A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 150 1.6 1.6 170 Tj = 125°C Tj = 25°C 280 15 Tj = 125°C Tj = 25°C Tj = 125°C 29 7 12 di/dt =3000A/µs www.microsemi.com Unit V VR=1200V IF = 150A VR = 600V V 75 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 150A Tj = 125°C R G = 2.2Ω Fall Time Tf Min 250 500 µA A 2.1 V ns July, 2006 Symbol Characteristic µC mJ 2-5 APTGT150DA120TG – Rev 1 Electrical Characteristics APTGT150DA120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.18 0.34 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952   1 1  RT : Thermistor value at T exp B 25 / 85  −   T25 T   Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol