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APTGT150DA170D1G

APTGT150DA170D1G

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    D1

  • 描述:

    IGBT 1700V 280A 780W D1

  • 数据手册
  • 价格&库存
APTGT150DA170D1G 数据手册
APTGT150DA170D1 Boost chopper VCES = 1700V IC = 150A @ Tc = 80°C ® Trench IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 3 1 Q2 6 7 3 2 1 2 4 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat 6 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 1700 280 150 300 ±20 780 Tj = 125°C 300A@1600V TC = 25°C TC = 80°C TC = 25°C Unit V A January, 2004 7 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT150DA170D1 – Rev 0 5 APTGT150DA170D1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 150A RG = 10Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 150A RG = 10Ω Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions IF = 150A VGE = 0V IF = 150A VR = 900V di/dt =900A/µs IF = 150A VR = 900V di/dt =900A/µs Torque Wt Min 2.0 2.4 5.8 Typ 13 0.45 280 100 850 4 2.4 Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol
APTGT150DA170D1G 价格&库存

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