APTGT200DH120G
Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module
VBUS Q1 G1 CR3
VCES = 1200V IC = 200A @ Tc = 80°C
Applicatio n • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant
E1
OUT1 OUT2
Q4 G4 CR2 E4
0/VBUS
OUT1 G1 E1 VBUS 0/VBUS
E4 G4 OUT2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT200DH120G – Rev 1
Reverse Bias Safe Operating Area
400A @ 1100V
July, 2006
Max ratings 1200 280 200 400 ±20 890
Unit V A
APTGT200DH120G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 1200V Tj = 25°C VGE =15V IC = 200A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0 V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 350 2.1 6.5 500 Unit µA V V nA
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7Ω
Min
Typ 14 0.8 0.6 260 30 420 70 290 50 520 90 20
Max
Unit nF
ns
ns
mJ 20
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
Test Conditions VR=1200V IF = 200A VGE = 0 V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C IF = 200A VR = 600V
di/dt =2500A/µs
Min 1200
Typ
Max 350 600
Unit V µA A
200 1.6 1.6 170 280 18 36 10 18
2.1
V ns µC mJ
July, 2006 2-5 APTGT200DH120G – Rev 1
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
www.microsemi.com
APTGT200DH120G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.14 0.25 150 125 100 5 3.5 280 Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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