APTGT200DH60G

APTGT200DH60G Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module VBUS Q1 G1 CR3 VCES = 600V IC = 200A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS E4 G4 OUT2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Reverse Bias Safe Operating Area 400A @ 550V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT200DH6G – Rev 1 June, 2006 Max ratings 600 290 200 400 ±20 625 Unit V A V W APTGT200DH60G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 600V Tj = 25°C VGE =15V IC = 200A Tj = 150°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0 V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A R G = 2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 200A R G = 2Ω Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 200A Tj = 25°C R G = 2Ω Tj = 150°C Min Typ 12.3 0.8 0.4 115 45 225 55 130 50 300 70 1 1.8 5.7 7 Max Unit nF ns ns mJ mJ Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=600V IF = 200A VGE = 0 V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 250 500 Unit V µA A di/dt =2200A/µs mJ www.microsemi.com 2-5 APTGT200DH6G – Rev 1 June, 2006 IF = 200A VR = 300V 200 1.6 1.5 130 225 9 19 2.3 4.7 2 V ns µC APTGT200DH60G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.24 0.4 175 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol