APTGT200SK170D3G

APTGT200SK170D3G Buck Chopper Trench + Field Stop IGBT Power Module 3 VCES = 1700V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Q1 4 5 1 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1700 310 200 400 ±20 1250 400A@1650V Unit V A V W September, 2008 1-5 APTGT200SK170D3G – Rev 1 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT200SK170D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 8 mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 3 2.5 6.4 400 Unit mA V V nA 5.2 Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=±15V, IC=200A VCE=900V Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 200A RG = 6.8Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 200A RG = 6.8Ω VGE = ±15V Tj = 25°C VBus = 900V Tj = 125°C IC = 200A Tj = 25°C RG = 6.8Ω Tj = 125°C VGE ≤15V ; VBus = 1000V tp ≤ 10µs ; Tj = 125°C Min Typ 18 0.6 2.3 280 80 850 120 300 100 1000 200 58 78 43 63 800 Max Unit nF µC ns ns mJ A Reverse diode ratings and characteristics Symbol Characteristic VRRM IRRM IF VF trr Qrr Err Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 750 1000 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V IF = 200A VR = 900V mJ www.microsemi.com 2-5 APTGT200SK170D3G – Rev 1 di/dt =3200A/µs 490 56 92 24 48 ns µC September, 2008 IF = 200A 200 1.8 1.9 385 2.2 V APTGT200SK170D3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 3500 -40 -40 -40 3 3 Min Typ Max 0.10 0.16 150 125 125 5 5 350 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol