APTGT200TL60G

APTGT200TL60G Three level inverter Trench + Field Stop IGBT Power Module VBUS VCES = 600V IC = 200A @ Tc = 80°C G1 Q1 E1 CR1 Application • Solar converter • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant CR5 G2 Q2 NEUTRAL E2 CR2 OUT CR6 G3 Q3 E3 CR3 G4 Q4 E4 CR4 0/VBUS VBUS G1 E1 0/VBUS G4 NEUTRAL E4 E2 G2 OUT E3 G3 Q1 to Q4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Max ratings 600 300 200 400 ±20 652 400A @ 550V Unit V A V W March, 2009 1-7 APTGT200TL60G – Rev0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT200TL60G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 200A Tj = 150°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 350 1.9 6.5 800 Unit µA V V nA 5.0 Q1 to Q4 Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=200A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.8Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.8Ω Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 200A Tj = 25°C RG = 1.8Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Min Typ 12.2 0.78 0.38 2.2 115 45 225 55 130 50 300 70 0.8 1.75 5 7 1000 0.23 Max Unit nF µC ns ns mJ mJ A °C/W www.microsemi.com 2-7 APTGT200TL60G – Rev0 March, 2009 APTGT200TL60G CR1 to CR4 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 150A VR = 300V IF = 150A VGE = 0V Test Conditions VR=600V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 150 400 150 1.6 1.5 100 150 7.2 15.2 1.7 3.6 0.52 2 Unit V µA A V ns µC mJ °C/W di/dt =2800A/µs CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 200A VR = 300V IF = 200A VGE = 0V Test Conditions VR=600V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 150 400 200 1.6 1.5 125 220 9.4 19.8 2.2 4.8 0.39 2 Unit V µA A V ns µC mJ °C/W di/dt =2800A/µs Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol