APTGT25X120T3G

APTGT25X120T3G 3 Phase bridge Trench + Field Stop IGBT® Power Module 15 16 19 20 18 23 25 29 30 22 28 R1 31 14 VCES = 1200V IC = 25A @ Tc = 80°C Application • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant 11 10 12 8 7 4 3 2 13 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 40 25 50 ±20 156 50A @ 1150V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT25X120T3G – Rev 0 July, 2007 APTGT25X120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 25A RG = 27Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 25A RG = 27Ω VGE = ±15V Tj = 25°C VBus = 600V Tj = 125°C IC = 25A Tj = 25°C RG = 27Ω Tj = 125°C Min Typ 1800 82 90 30 420 70 90 50 520 90 1.9 2.5 1.9 2.9 Max Unit pF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 150°C Tc = 80°C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V Min 1200 Typ Max 100 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=1200V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 30 2.6 3.2 1.8 300 380 360 1700 3.1 V ns nC July, 2007 2-5 APTGT25X120T3G – Rev 0 di/dt =200A/µs www.microsemi.com APTGT25X120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature  1 1  RT: Thermistor value at T exp  B25 / 85   T − T    25   Min Typ 50 3952 Max Unit kΩ K Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.8 1.2 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol