APTGT300A170D3G

APTGT300A170D3G Phase leg Trench + Field Stop IGBT3 Power Module 3 VCES = 1700V IC = 300A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Q1 4 5 Q2 6 7 1 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1700 400 300 600 ±20 1470 600A@1650V Unit V A V W March, 2011 1-5 APTGT300A170D3G – Rev 2 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT300A170D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 12 mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 3 2.5 6.4 400 Unit mA V V nA 5.2 Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=±15V, IC=300A VCE=900V Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 300A RG = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 300A RG = 4.7Ω VGE = ±15V Tj = 25°C VBus = 900V Tj = 125°C IC = 300A Tj = 25°C RG = 4.7Ω Tj = 125°C VGE ≤15V ; VBus = 1000V tp ≤ 10µs ; Tj = 125°C Min Typ 27 0.9 3.5 280 80 850 120 300 100 1000 200 71 105 64 94 1200 Max Unit nF µC ns ns mJ A Reverse diode ratings and characteristics Symbol Characteristic VRRM IRRM IF VF trr Qrr Err Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 750 1000 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V IF = 300A IF = 300A VR = 900V di/dt =3500A/µs mJ www.microsemi.com 2-5 APTGT300A170D3G – Rev 2 490 76 124 35 70 ns µC March, 2011 300 1.8 1.9 385 2.2 V APTGT300A170D3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 4000 -40 -40 -40 3 3 Min Typ Max 0.085 0.13 150 125 125 5 5 350 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol