APTGT300DU170G

APTGT300DU170G Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 Q2 G2 VCES = 1700V IC = 300A @ Tc = 80°C Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E1 E2 E G1 E1 C1 E C2 E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 600A @ 1600V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300DU170G – Rev 1 July, 2006 Max ratings 1700 400 300 600 ±20 1660 Unit V A V W APTGT300DU170G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 1700V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 5 mA VGE = 20V, VCE = 0 V Min Typ 2.0 2.4 5.8 Max 750 2.4 6.5 600 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 300A R G = 2.2Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 300A R G = 2.2Ω VGE = 15V Tj = 125°C VBus = 900V IC = 300A Tj = 125°C R G = 2.2Ω Min Typ 26.5 1.1 0.88 370 40 650 180 400 50 800 300 96 Max Unit nF ns ns mJ 94 Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 750 1000 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V IF = 300A 300 1.8 1.9 385 490 76 124 35 70 2.2 V ns µC mJ July, 2006 2-5 APTGT300DU170G – Rev 1 IF = 300A VR = 900V di/dt =3200A/µs www.microsemi.com APTGT300DU170G Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode Min Typ Max 0.075 0.14 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol