APTGT300DU60G

APTGT300DU60G Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 Q2 G2 VCES = 600V IC = 300A @ Tc = 80°C Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E1 E2 E G1 E1 C1 E C2 E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Reverse Bias Safe Operating Area 600A @ 550V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300DU60G – Rev 1 June, 2006 Max ratings 600 430 300 500 ±20 1150 Unit V A V W APTGT300DU60G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 600V Tj = 25°C VGE =15V IC = 300A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0 V Min Typ 1.4 1.5 5.8 Max 350 1.8 6.5 500 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 300A R G = 1.8Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 300A R G = 1.8Ω VGE = ±15V VBus = 300V IC = 300A R G = 1.8Ω Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min Typ 24 1.5 0.75 115 45 200 55 120 50 250 70 1.5 2.7 8.55 10.5 Max Unit nF ns ns mJ mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=600V IF = 300A VGE = 0 V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 150 400 Unit V µA A di/dt =3100A/µs mJ www.microsemi.com 2-5 APTGT300DU60G – Rev 1 June, 2006 IF = 300A VR = 300V 300 1.5 1.4 130 225 13.5 28.5 3.5 7.1 1.9 V ns µC APTGT300DU60G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.13 0.21 175 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol