APTGT30A170T1G

APTGT30A170T1G Phase leg Trench + Field Stop IGBT® Power Module 5 Q1 7 8 Q2 9 10 1 2 12 CR2 3 4 NTC 6 11 VCES = 1700V IC = 30A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant CR1 Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1700 45 30 70 ±20 210 60A@1600V Unit V A V W August, 2007 1–5 APTGT30A170T1G – Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT30A170T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 30A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 250 2.4 6.4 600 Unit µA V V nA 5.2 Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 30A RG = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 30A RG = 18Ω VGE = ±15V Tj = 125°C VBus = 900V IC = 30A Tj = 125°C RG = 18Ω Min Typ 2500 90 100 70 650 80 100 70 750 100 17 mJ 15 Max Unit pF ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 50A VR = 900V di/dt =800A/µs IF = 50A VGE = 0V Test Conditions VR=1700V Tj = 25°C Tj = 125°C TC=80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 250 500 50 1.8 1.9 385 490 14 23 6 12 2.2 Unit V µA A V ns µC August, 2007 2–5 APTGT30A170T1G – Rev 0 mJ www.microsemi.com APTGT30A170T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 3500 -40 -40 -40 2.5 Min Typ Max 0.60 0.70 150 125 100 4.7 80 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol