APTGT30DDA60T3G
Dual Boost chopper
Trench + Field Stop IGBT®
Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
13 14
CR2
23
8
Q1
Q2
26
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
• RoHS Compliant
Absolute maximum ratings
Symbol
VCES
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TJ = 150°C
Max ratings
600
50
30
60
±20
90
60A @ 550V
Unit
V
June , 2006
7
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
• High level of integration
• Internal thermistor for temperature monitoring
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT30DDA60T3G – Rev 1,
CR1
22
VCES = 600V
IC = 30A @ Tc = 80°C
APTGT30DDA60T3G
All ratings @ Tj = 25°C unless otherwise specified
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 30A
Tj = 150°C
VGE = VCE , IC = 400µA
VGE = 20V, VCE = 0V
Test Conditions
VRRM
IRM
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
Min
Typ
Max
Unit
250
1.9
µA
6.5
300
V
nA
Max
Unit
1600
110
50
110
45
200
40
pF
ns
50
ns
250
60
0.16
0.3
0.7
1.05
Typ
mJ
mJ
Max
600
VR=600V
IF = 30A
VGE = 0V
IF = 30A
VR = 300V
di/dt =1800A/µs
www.microsemi.com
V
120
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
5.0
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 30A
R G = 10Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 30A
R G = 10Ω
Tj = 25°C
VGE = ±15V
VBus = 300V
Tj = 150°C
IC = 30A
Tj = 25°C
R G = 10Ω
Tj = 150°C
Test Conditions
Typ
1.5
1.7
5.8
VGE = 0V
VCE = 25V
f = 1MHz
Chopper diode ratings and characteristics
Symbol Characteristic
Min
Unit
V
Tj = 25°C
Tj = 150°C
250
500
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
30
1.6
1.5
100
150
1.5
Tj = 150°C
Tj = 25°C
Tj = 150°C
3.1
0.34
0.75
µA
A
2
V
June , 2006
Symbol Characteristic
ns
µC
mJ
2-5
APTGT30DDA60T3G – Rev 1,
Electrical Characteristics
APTGT30DDA60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
1.6
2.45
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952
1 1 RT : Thermistor value at T
exp B 25 / 85
−
T25 T
Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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