APTGT30TL601G

APTGT30TL601G Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 30A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant All multiple inputs and outputs must be shorted together 5/6 ; 9/10 Q1 to Q4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C Max ratings 600 50 30 60 ±20 90 60A @ 550V Unit V A V W March, 2009 1-7 APTGT30TL601G – Rev0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT30TL601G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 30A Tj = 150°C VGE = VCE , IC = 400µA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 300 Unit µA V V nA 5.0 Q1 to Q4 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=30A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 30A RG = 10Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 30A RG = 10Ω Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 30A Tj = 25°C RG = 10Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Min Typ 1600 110 50 0.3 110 45 200 40 120 50 250 60 0.16 0.3 0.7 1.05 150 1.6 ns Max Unit pF µC ns mJ mJ A °C/W www.microsemi.com 2-7 APTGT30TL601G – Rev0 March, 2009 APTGT30TL601G CR1 to CR4 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 20A VR = 300V IF = 20A VGE = 0V Test Conditions VR=600V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 150 350 20 1.6 1.5 100 150 1.1 2.3 0.23 0.50 3.25 2 Unit V µA A V ns µC mJ °C/W di/dt =1600A/µs CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 30A VR = 300V IF = 30A VGE = 0V Test Conditions VR=600V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 150 350 30 1.6 1.5 100 150 1.5 3.1 0.34 0.75 2.45 2 Unit V µA A V ns µC mJ °C/W di/dt =1800A/µs Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol