APTGT35H120T1G

APTGT35H120T1G Full – Bridge Fast Trench + Field Stop IGBT® Power Module 3 Q1 5 6 Q2 7 1 Q4 CR2 CR4 9 4 Q3 CR1 CR3 2 VCES = 1200V IC = 35A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant 8 11 NTC 10 12 Pins 3/4 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 55 35 70 ±20 208 70A@1150V Unit V August, 2007 1–5 APTGT35H120T1G – Rev 0 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT35H120T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V VCE = 1200V Tj = 25°C Tj = 125°C Tj = 25°C VGE = 15V IC = 35A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.1 6.5 400 Unit µA V V nA 5.0 1.7 2.0 5.8 Dynamic Characteristics Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 35A RG = 27Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 35A RG = 27Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 35A Tj = 125°C RG = 27Ω Min Typ 2.5 0.15 90 30 420 70 90 50 520 90 3.5 mJ 4.1 Max Unit nF ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 35A VR = 600V IF = 35A Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 35 1.6 1.6 170 280 3.5 7 1.4 2.7 Min 1200 Typ Max 250 500 2.1 Unit V µA A V ns µC mJ August, 2007 2–5 APTGT35H120T1G – Rev 0 VR=1200V di/dt =1500A/µs www.microsemi.com APTGT35H120T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.60 0.95 150 125 100 4.7 80 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol