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APTGT35SK120D1G

APTGT35SK120D1G

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    D1

  • 描述:

    IGBT 1200V 55A 205W D1

  • 数据手册
  • 价格&库存
APTGT35SK120D1G 数据手册
APTGT35SK120D1 Buck chopper VCES = 1200V IC = 35A @ Tc = 80°C ® Trench IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies 3 4 1 2 3 2 1 4 5 7 6 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 1200 55 35 70 ±20 205 Tj = 125°C 70A@1200V TC = 25°C TC = 80°C TC = 25°C Unit V A V W January, 2004 5 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT35SK120D1 – Rev 0 Q1 APTGT35SK120D1 All ratings @ Tj = 25°C unless otherwise specified VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Reverse diode ratings and characteristics Symbol Characteristic VF Diode Forward Voltage Erec Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions VGE = 0V, IC = 1.5mA VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 35A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Test Conditions IF = 35A VGE = 0V IF = 35A VR = 600V di/dt =990A/µs IF = 35A VR = 600V di/dt =990A/µs Min TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol
APTGT35SK120D1G 价格&库存

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