APTGT400DU120G

APTGT400DU120G Dual common source Fast Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 Q2 G2 VCES = 1200V IC = 400A @ Tc = 80°C Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E1 E2 E G1 E1 C1 E C2 E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 800A @ 1100V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT400DU120G – Rev 1 * Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater than 100°C for the connectors. July, 2006 Max ratings 1200 560 * 400 800 ±20 1785 Unit V A V W APTGT400DU120G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 1200V Tj = 25°C VGE =15V IC = 400A Tj = 125°C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0 V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 750 2.1 6.5 800 Unit µA V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 400A R G = 1.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 400A R G = 1.2Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 400A Tj = 125°C R G = 1.2Ω Min Typ 28 1.6 1.2 260 30 420 80 290 50 520 100 40 Max Unit nF ns ns mJ 40 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=1200V IF = 400A VGE = 0 V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C IF = 400A VR = 600V di/dt =4000A/µs Min 1200 Typ Max 700 900 Unit V µA A 400 1.6 1.6 170 280 36 72 20 36 2.1 V ns µC mJ Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C www.microsemi.com 2-5 APTGT400DU120G – Rev 1 July, 2006 APTGT400DU120G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.07 0.13 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol