APTGT450DU60G

APTGT450DU60G Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 Q2 G2 VCES = 600V IC = 450A @ Tc = 80°C Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E1 E2 E G1 E1 C1 E C2 E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Max ratings 600 550 450 600 ±20 1750 900A @ 550V Unit V A V W June, 2006 1-5 APTGT450DU60G – Rev 1 Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT450DU60G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 600V Tj = 25°C VGE =15V IC = 450A Tj = 150°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0 V Min Typ 1.4 1.5 5.8 Max 500 1.8 6.5 600 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 450A R G = 1Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 450A R G = 1Ω Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 450A Tj = 25°C R G = 1Ω Tj = 150°C Min Typ 37 2.3 1.1 130 55 250 60 145 60 320 80 2.25 4.2 12.8 15.7 Max Unit nF ns ns mJ mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=600V IF = 450A VGE = 0 V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 200 500 Unit V µA A di/dt =4000A/µs mJ www.microsemi.com 2-5 APTGT450DU60G – Rev 1 June, 2006 IF = 450A VR = 300V 450 1.5 1.4 120 210 20.3 42.8 5.2 10.6 1.9 V ns µC APTGT450DU60G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.085 0.14 175 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol