APTGT50DDA60T3G

APTGT50DDA60T3G Dual Boost chopper Trench + Field Stop IGBT® Power Module 13 14 VCES = 600V IC = 50A @ Tc = 80°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 CR2 22 7 23 Q1 26 27 8 Q2 4 3 29 15 30 31 R1 32 16 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability. • RoHS Compliant 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT50DDA60T3G – Rev 1 Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V June, 2006 A V W APTGT50DDA60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0 V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A R G = 8.2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A R G = 8.2Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 50A Tj = 25°C R G = 8.2Ω Tj = 150°C Min Typ 3150 200 95 110 45 200 40 120 50 250 60 0.3 0.43 1.35 1.75 Max Unit pF ns ns mJ mJ Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 250 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=600V IF = 50A VGE = 0 V IF = 50A VR = 300V di/dt =1800A/µs mJ www.microsemi.com 2-5 APTGT50DDA60T3G – Rev 1 50 1.6 1.5 100 150 2.6 5.4 0.6 1.2 2 V June, 2006 ns µC APTGT50DDA60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85    T − T    25  T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.85 1.42 175 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol