APTGT50SK170TG

APTGT50SK170TG Buck chopper Trench + Field Stop IGBT® Power Module VBUS Q1 G1 NT C2 VCES = 1700V IC = 50A @ Tc = 80°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E1 OUT 0/VBU S SENSE 0/VBU S NT C1 0/VBUS SENSE OUT VBUS 0/VBUS OUT E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT50SK170TG – Rev 1 Reverse Bias Safe Operating Area 100A @ 1600V July, 20061 Max ratings 1700 75 50 100 ±20 312 Unit V A APTGT50SK170TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 1700V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 1 mA VGE = 20V, VCE = 0 V Min Typ 2.0 2.4 5.8 Max 250 2.4 6.5 400 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 50A R G = 10Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 50A R G = 10Ω VGE = 15V Tj = 125°C VBus = 900V IC = 50A Tj = 125°C R G = 10Ω Min Typ 4400 180 150 370 40 650 180 400 50 800 300 16 Max Unit pF ns ns mJ 15 Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 250 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V IF = 50A µC mJ www.microsemi.com 2-5 APTGT50SK170TG – Rev 1 July, 20061 IF = 50A VR = 900V di/dt =800A/µs 50 1.8 1.9 385 490 14 23 6 12 2.2 V ns APTGT50SK170TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85    T − T    25  T: Thermistor te mperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.4 0.7 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol