APTGT600A60G

APTGT600A60G Phase leg Trench + Field Stop IGBT® Power Module VBUS Q1 G1 VCES = 600V IC = 600A* @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC o f VCEsat • Low profile • RoHS Compliant E1 OUT Q2 G2 E2 0/VBUS G1 E1 VBUS 0/VBUS OUT E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Reverse Bias Safe Operating Area 1200A @ 550V * Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater than 100°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT600A60G – Rev 1 June, 2006 Max ratings 600 700 * 600 * 800 ±20 2300 Unit V A V W APTGT600A60G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 600V Tj = 25°C VGE =15V IC = 600A Tj = 150°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0 V Min Typ 1.4 1.5 5.8 Max 750 1.8 6.5 800 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 600A R G = 2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 600A R G = 2Ω Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 600A Tj = 25°C R G = 2Ω Tj = 150°C Min Typ 49 3.1 1.5 130 55 250 60 145 60 320 80 3 5.5 17 21 Max Unit nF ns ns mJ mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=600V IF = 600A VGE = 0 V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 350 550 Unit V µA A di/dt =5000A/µs mJ www.microsemi.com 2-5 APTGT600A60G – Rev 1 June, 2006 IF = 600A VR = 300V 600 1.5 1.4 120 210 27 57 6.9 14.1 1.9 V ns µC APTGT600A60G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.065 0.11 175 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol