APTGT600U170D4G

APTGT600U170D4G Single switch Trench + Field Stop IGBT Power Module 1 VCES = 1700V IC = 600A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • • • • Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration 3 5 2 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1700 1100 600 1200 ±20 2900 1200A@1600V Unit V July, 2008 1-5 APTGT600U170D4G – Rev 2 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT600U170D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 600A Tj = 125°C VGE = VCE , IC = 24 mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 5 2.4 6.4 400 Unit mA V V nA 5.2 Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=±15V, IC=600A VCE=900V Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 600A RG = 2.4Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 600A RG = 2.4Ω VGE = ±15V Tj = 125°C VBus = 900V IC = 600A Tj = 125°C RG = 2.4Ω VGE ≤15V ; VBus = 1000V tp ≤ 10µs ; Tj = 125°C Min Typ 51 1.8 6.8 280 100 850 150 330 100 1000 230 200 mJ 190 2200 A Max Unit nF µC ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF Err trr Qrr Maximum Reverse Leakage Current DC forward current Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge IF = 600A VR = 900V IF = 600A VGE = 0V Test Conditions VR=1700V Tj = 25°C Tj = 125°C Tc=80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 750 1000 600 1.8 1.9 85 145 450 600 150 250 2.2 Unit V µA A V mJ ns µC July, 2008 2-5 APTGT600U170D4G – Rev 2 di/dt =5200A/µs www.microsemi.com APTGT600U170D4G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M4 M6 IGBT Diode 3500 -40 -40 -40 1 3 Min Typ Max 0.044 0.065 150 125 125 2 5 350 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol