APTGT75SK170D1G

APTGT75SK170D1G Buck chopper Trench + Field Stop IGBT Power Module Q1 4 5 3 • • VCES = 1700V IC = 75A @ Tc = 80°C Application AC and DC motor control Switched Mode Power Supplies Features 1 • 2 • • • Benefits • • • • • • • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive High level of integration M5 power connectors Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1700 130 75 150 ±20 465 150A @ 1600V Unit V December, 2009 1–4 APTGT75SK170T1G – Rev 2 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT75SK170D1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 75A Tj = 125°C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 250 2.4 6.5 600 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=75A VCE=900V Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 75A RG = 18Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 75A RG = 18Ω VGE = 15V Tj = 125°C VBus = 900V IC = 75A Tj = 125°C RG = 18Ω VGE ≤15V ; VBus = 1000V tp ≤ 10µs ; Tj = 125°C Min Typ 6800 277 220 0.85 280 80 850 120 300 100 1000 200 27 mJ 24.5 300 A Max Unit pF µC ns ns Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Err Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 250 500 Unit V µA A V ns µC mJ December, 2009 2–4 APTGT75SK170T1G – Rev 2 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V IF = 75A 75 1.8 1.9 410 520 19 31 9 17.5 2.2 IF = 75A VR = 900V di/dt =800A/µs www.microsemi.com APTGT75SK170D1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M5 M6 IGBT Diode 4000 -40 -40 -40 2 3 Min Typ Max 0.27 0.5 150 125 125 3.5 5 180 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol