APTGT75X60T3G

APTGT75X60T3G 3 Phase bridge Trench + Field Stop IGBT® Power Module 15 16 19 20 18 23 25 29 30 22 28 R1 31 14 VCES = 600V IC = 75A* @ Tc = 80°C Application • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant 11 10 12 8 7 4 3 2 13 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C Max ratings 600 100* 75* 150 ±20 250 150A @ 550V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT75X60T3G – Rev 0 * Specification of IGBT device but output current must be limited to 40A at Tc=80°C and 65A at Tc=25°C not to exceed a connectors temperature greater than 120°C. July, 2007 APTGT75X60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 75A Tj = 150°C VGE = VCE, IC = 600µA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 75A Tj = 25°C RG = 4.7Ω Tj = 150°C Min Typ 4620 300 140 110 45 200 40 120 50 250 60 0.35 0.6 2.2 2.6 ns Max Unit pF ns mJ mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 250 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=600V IF = 50A VGE = 0V 50 1.6 1.5 100 150 2.6 5.4 0.6 1.2 2 V ns July, 2007 2-5 APTGT75X60T3G – Rev 0 IF = 50A VR = 300V di/dt =1800A/µs µC mJ www.microsemi.com APTGT75X60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature  1 1  RT: Thermistor value at T exp  B25 / 85   T − T    25   Min Typ 50 3952 Max Unit kΩ K Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.6 1.42 175 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol