APTGV100H60T3G

APTGV100H60T3G Full - Bridge NPT & Trench + Field Stop® IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80°C 13 14 Application CR3 Q3 11 10 Q1 18 19 CR1 • Solar converter Features 22 23 Q2 7 8 CR4 Q4 26 27 CR2 • Q2, Q4 FAST Non Punch Through (NPT) IGBT - Switching frequency up to 100 kHz - RBSOA & SCSOA rated - Low tail current • Q1, Q3 Trench & Field Stop IGBT® - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current • • • • Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring 4 3 29 15 30 31 R1 32 16 Top switches : Trench + Field Stop IGBT® Bottom switches : FAST NPT IGBT 28 27 26 25 29 30 23 22 20 19 18 16 15 Benefits Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS Compliant • • • • 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-9 APTGV100H60T3G – Rev 0 June, 2007 APTGV100H60T3G All ratings @ Tj = 25°C unless otherwise specified 1. Top switches 1.1 Top Trench + Field Stop IGBT® characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Max ratings 600 150 * 100 * 200 ±20 340 200A @ 550V Unit V A V W * Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 100A Tj = 25°C RG = 3.3Ω Tj = 150°C Min Typ 6100 390 190 115 45 225 55 130 50 300 70 0.4 0.875 2.5 3.5 0.44 Max Unit pF ns ns mJ mJ °C/W www.microsemi.com 2-9 APTGV100H60T3G – Rev 0 June, 2007 APTGV100H60T3G 1.2 Top fast diode characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt =200A/µs Min 600 Typ Max 100 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 100 1.6 2 1.3 160 220 290 1530 2 V Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance ns nC 0.55 °C/W 2. Bottom switches 2.1 Bottom Fast NPT IGBT characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 600 110 90 315 ±20 416 200A @ 600V Unit V A V W Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V Tj = 25°C VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 90A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 2.5 5 ±150 Unit µA V V nA June, 2007 2.0 2.2 3 www.microsemi.com 3-9 APTGV100H60T3G – Rev 0 APTGV100H60T3G Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 90A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω VGE = 15V Tj = 125°C VBus = 400V IC = 90A Tj = 125°C RG = 5 Ω Min Typ 4300 470 400 330 290 200 26 25 150 30 26 25 170 40 4.3 mJ 3.5 0.3 °C/W Max Unit pF nC ns ns 2.2 Bottom diode characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt =200A/µs Min 600 Typ Max 250 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 30 1.6 1.9 1.4 85 160 130 700 1.8 V trr Qrr RthJC Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance ns nC 1.2 °C/W June, 2007 4-9 APTGV100H60T3G – Rev 0 3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature  1 1  RT: Thermistor value at T exp  B25 / 85   T − T    25   Min Typ 50 3952 Max Unit kΩ K www.microsemi.com APTGV100H60T3G 4. Package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol