APTGV15H120T3G

APTGV15H120T3G Full - Bridge NPT & Trench + Field Stop® IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 15A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 15A @ Tc = 80°C 13 14 Application CR3 Q3 11 10 Q1 18 19 CR1 • Solar converter Features 22 23 Q2 7 8 CR4 Q4 26 27 CR2 • Q2, Q4 (FAST Non Punch Through (NPT) IGBT) - Switching frequency up to 50 kHz - RBSOA & SCSOA rated - Low tail current • Q1, Q3 (Trench & Field Stop IGBT®) - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current • • • • Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring 4 3 29 15 30 31 R1 32 16 Top switches : Trench + Field Stop IGBT® Bottom switches : FAST NPT IGBT® 28 27 26 25 29 30 23 22 20 19 18 16 15 Benefits Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS Compliant • • • • 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32 June, 2007 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-9 APTGV15H120T3G – Rev 0 APTGV15H120T3G All ratings @ Tj = 25°C unless otherwise specified 1. Top switches 1.1 Top Trench + Field Stop IGBT® characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 25 15 30 ±20 115 30A @ 1150V Unit V A V W Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 15A Tj = 125°C VGE = VCE , IC = 0.6mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 15A RG = 62Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 15A RG = 62Ω VGE = ±15V Tj = 25°C VBus = 600V Tj = 125°C IC = 15A Tj = 25°C RG = 62Ω Tj = 125°C Min Typ 1100 90 90 30 420 80 90 30 520 120 1.15 1.5 1.15 1.8 1.3 Max Unit pF ns ns mJ °C/W June, 2007 www.microsemi.com 2-9 APTGV15H120T3G – Rev 0 APTGV15H120T3G 1.2 Top fast diode characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 15A IF = 30A IF = 15A IF = 15A VR = 800V di/dt =200A/µs Min 1200 Typ Max 100 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=1200V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 15 2.8 3.4 2.4 240 290 260 960 3.3 V Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance ns nC 2 °C/W 2. Bottom switches 2.1 Bottom Fast NPT IGBT characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 25 15 60 ±20 140 30A@1150V Unit V A V W Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V VCE = 1200V Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 15A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 3.7 6 400 Unit µA V V nA 2.5 4 3.2 4.0 www.microsemi.com 3-9 APTGV15H120T3G – Rev 0 June, 2007 APTGV15H120T3G Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =15A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 15A RG = 33Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 15A RG = 33Ω VGE = 15V Tj = 125°C VBus = 400V IC = 15A Tj = 125°C RG = 33Ω Min Typ 1000 150 70 99 10 70 60 50 315 30 60 50 356 40 2 mJ 1 0.9 °C/W Max Unit pF nC ns ns 2.2 Bottom diode characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 15A IF = 30A IF = 15A IF = 15A VR = 800V di/dt =200A/µs Min 1200 Typ Max 100 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=1200V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 15 2.8 3.4 2.4 240 290 260 960 3.3 V Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance ns nC 2 °C/W June, 2007 4-9 APTGV15H120T3G – Rev 0 3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature  1 1  RT: Thermistor value at T exp  B25 / 85    T − T    25  Min Typ 50 3952 Max Unit kΩ K www.microsemi.com APTGV15H120T3G 4. Package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol