APTM08TAM04PG

APTM08TAM04PG Triple phase leg MOSFET Power Module VBUS1 VBUS2 VBUS3 VDSS = 75V RDSon = 4.2mΩ max @ Tj = 25°C ID = 120A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 G3 G5 S1 U S3 V S5 W G2 G4 G6 S2 0/VBUS1 S4 0/VBUS2 S6 0/VBUS3 Features • Power MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant Max ratings 75 120 90 250 ±30 4.5 138 75 50 1500 Unit V A V mΩ W A mJ July, 2006 1–7 APTM08TAM04P G– Rev 1 VBUS 1 VBUS 2 VBUS 3 G1 0/VBUS 1 S1 S2 G2 0/VBUS 2 G3 S3 S4 G4 0/VBUS 3 G5 S5 S6 G6 U V W Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM08TAM04PG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 75V VGS = 0V,VDS = 60V Typ Tj = 25°C Tj = 125°C 4.2 2 VGS = 10V, ID = 60A VGS = VDS, ID = 1 mA VGS = ±30 V, VDS = 0 V Max 100 250 4.5 4 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 60V ID =120A Inductive switching @ 125°C VGS = 15V VBus = 40V ID = 120A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 40V ID = 120A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 40V ID = 120A, R G = 5 Ω Min Typ 4530 1080 450 153 25 82 35 60 100 65 290 317 319 336 Max Unit pF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 120A IS = - 120A VR = 40V diS/dt = 100A/µs Tj = 25°C Tj = 25°C 100 300 Max 120 90 1.3 6 200 Unit A V V/ns ns nC www.microsemi.com 2–7 APTM08TAM04P G– Rev 1 July, 2006 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 120A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APTM08TAM04PG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 6V 5.5V 40 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 60A 1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V) 8 RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 140 120 100 80 60 40 20 0 25 50 75 100 125 150 July, 2006 4–7 APTM08TAM04P G– Rev 1 1.1 1 VGS =10V VGS=20V 0.9 0.8 0 50 100 150 200 250 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM08TAM04PG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 limited by RDSon VGS=10V ID= 60A 100µs 100 1ms 10 Single pulse TJ=150°C TC=25°C 1 10 100 VDS, Drain to Source Voltage (V) 1 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC) July, 2006 V DS =60V ID=120A T J=25°C V DS =15V 10000 Ciss 1000 Coss Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–7 APTM08TAM04P G– Rev 1 APTM08TAM04PG Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) VDS=40V RG=5Ω T J=125°C L=100µH Rise and Fall times vs Current 120 V DS =40V RG =5Ω T J=125°C L=100µH t d(off) tr and t f (ns) 100 80 60 40 20 0 25 tf tr td(on) 50 75 100 125 150 175 200 ID, Drain Current (A) Switching Energy vs Current 0.75 Eoff Switching Energy (mJ) V DS =40V RG =5Ω T J=125°C L=100µH Switching Energy vs Gate Resistance 1.5 VDS=40V ID=120A TJ=125°C L=100µH Eon and Eoff ( mJ) 0.5 1 Eoff Eon 0.25 Eon 0.5 Eon 0 25 50 75 100 125 150 175 200 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 250 Frequency (kHz) 200 150 100 50 0 20 40 60 80 100 120 I D, Drain Current (A) V DS=40V D=50% R G=5Ω T J=125°C T C=75°C ZCS ZVS 0 0 10 20 30 40 50 60 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 100 TJ=150°C TJ=25°C 10 Hard switching 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–7 APTM08TAM04P G– Rev 1 APTM08TAM04PG www.microsemi.com 7–7 APTM08TAM04P G– Rev 1 July, 2006