APTM100A13DG

APTM100A13DG Phase leg with Series diodes MOSFET Power Module VBUS VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Applicatio n • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G1 S1 OUT G2 S2 0/VBUS G1 S1 VBUS 0/VBUS OUT S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C Max ratings 1000 65 49 240 ±30 156 1250 24 30 1300 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM100A13DG – Rev 2 December, 2006 APTM100A13DG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 32.5A VGS = VDS, ID = 6 mA VGS = ±30 V, VDS = 0 V 130 3 Max 600 2 156 5 ±450 Unit µA mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 65A Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 65A R G = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5 Ω Min Typ 15.2 2.6 0.42 562 75 363 9 9 50 24 2.13 0.46 4.4 0.57 Max Unit nF nC ns mJ mJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF Test Conditions VR=1200V Tj = 25°C Tj = 125°C T c = 100°C Min 1200 Typ Max 150 600 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 120A IF = 240A IF = 120A IF = 120A VR = 800V di/dt = 400A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 120 2.5 3 1.8 265 350 1120 5800 3 V December, 2006 2-6 APTM100A13DG – Rev 2 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com APTM100A13DG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Series diode 2500 -40 -40 -40 3 2 Min Typ Max 0.10 0.46 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 5.5V 5V 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 70 60 50 40 30 20 10 0 25 50 75 100 125 150 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com 4-6 APTM100A13DG – Rev 2 December, 2006 30 60 90 120 150 180 APTM100A13DG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 14 12 10 8 6 4 2 0 0 120 240 360 480 600 720 840 December, 2006 5-6 APTM100A13DG – Rev 2 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=32.5A 1000 100µs limited by RDSon 100 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 1 1 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=65A TJ=25°C V DS =500V V DS =200V VDS=800V 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com APTM100A13DG Delay Times vs Current 60 td(on) and td(off) (ns) 50 VDS=667V RG=0.5Ω T J=125°C L=100µH Rise and Fall times vs Current 50 t d(off) 40 tr and tf ( ns) 30 20 10 0 20 30 40 50 60 70 80 90 100 20 30 ID, Drain Current (A) Switching Energy vs Current 40 50 60 70 80 I D, Drain Current (A) 90 100 VDS=667V RG=0.5Ω T J=125°C L=100µH 40 30 20 10 0 tf tr t d(on) Switching Energy vs Gate Resistance 6 8 Switching Energy (mJ) 6 5 4 3 2 1 0 20 Eon Switching Energy (mJ) 7 VDS=667V RG=0.5Ω T J=125°C L=100µH 5 4 3 2 1 0 V DS=667V ID=65A T J=125°C L=100µH Eon Eoff Eoff 30 40 50 60 70 80 90 100 0 1 2 3 4 5 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=667V D=50% RG=0.5Ω T J=125°C T C=75°C Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000 TJ=150°C 300 250 Frequency (kHz) 200 150 100 50 0 10 20 30 40 50 ID, Drain Current (A) 60 Hard switching ZCS 100 T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 December, 2006 6-6 APTM100A13DG – Rev 2 VSD, Source to Drain Voltage (V) M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com