APTM100A13SCG

APTM100A13SCG Phase leg Series & SiC parallel diodes VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration MOSFET Power Module VBUS Q1 G1 OUT S1 Q2 G2 0/VBUS S2 • • G1 S1 VBUS 0/VBUS OUT • S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Max ratings 1000 65 49 240 ±30 156 1250 24 30 1300 Unit V A V mΩ W A mJ Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100A13SCG – Rev 2 July, 2006 APTM100A13SCG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 32.5A VGS = VDS, ID = 6 mA VGS = ±30 V, VDS = 0 V 130 3 Max 600 2 156 5 ±450 Unit µA mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 65A Inductive switching @125°C VGS = 15V VBus = 667V ID = 65A R G = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5 Ω Min Typ 15.2 2.6 0.42 562 75 363 9 9 50 24 1278 462 2671 570 Max Unit nF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=200V IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/µs Min 200 Tj = 25°C Tj = 125°C Tc = 85°C Typ Max 350 600 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 60 1.1 1.4 0.9 24 48 66 300 1.15 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC July, 2006 2–7 APTM100A13SCG – Rev 2 www.microsemi.com APTM100A13SCG SiC Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 40A Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 125°C Tj = 25°C Tj = 175°C Min 1200 Typ 400 800 40 1.6 2.6 112 360 264 Min Transistor Series diode Parallel diode 2500 -40 -40 -40 3 2 Typ Max 0.10 0.65 0.35 150 125 100 5 3.5 280 Max 1600 8000 1.8 3.0 Unit V µA A V nC pF IF = 40A, VR = 600V di/dt =2000A/µs f = 1 MHz, VR = 200V f = 1MHz, VR = 400V Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 5.5V 5V 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 70 60 50 40 30 20 10 0 25 50 75 100 125 150 July, 2006 4–7 APTM100A13SCG – Rev 2 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 30 60 90 120 150 180 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM100A13SCG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 14 12 10 8 6 4 2 0 0 120 240 360 480 600 720 840 Gate Charge (nC) July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=32.5A 1000 100µs limited by RDSon 100 1ms 10 Single pulse TJ=150°C TC=25°C 1 10ms 1 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=65A TJ=25°C V DS =500V V DS =200V VDS=800V 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–7 APTM100A13SCG – Rev 2 APTM100A13SCG Delay Times vs Current 60 td(on) and td(off) (ns) 50 VDS=667V RG=0.5Ω T J=125°C L=100µH Rise and Fall times vs Current 50 t d(off) 40 tr and tf ( ns) 30 20 10 0 20 30 40 50 60 70 80 90 100 20 30 ID, Drain Current (A) Switching Energy vs Current 40 50 60 70 80 I D, Drain Current (A) 90 100 VDS=667V RG=0.5Ω T J=125°C L=100µH 40 30 20 10 0 tf tr t d(on) Switching Energy vs Gate Resistance 5 Switching Energy (mJ) 4 Switching Energy (mJ) VDS=667V RG=0.5Ω T J=125°C L=100µH 4 3 2 1 0 Eon 3 2 1 0 Eon Eoff VDS=667V ID=65A T J=125°C L=100µH Eoff 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 ID, Drain Current (A) Operating Frequency vs Drain Current ZCS VDS=667V D=50% RG=0.5Ω T J=125°C T C=75°C Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 500 400 Frequency (kHz) 1000 100 T J=150°C T J=25°C 300 200 100 0 10 20 Hars switching ZVS 10 30 40 50 ID, Drain Current (A) 60 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 www.microsemi.com 6–7 APTM100A13SCG – Rev 2 APTM100A13SCG Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (°C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25°C Reverse Characteristics 80 I F Forward Current (A) 1600 IR Reverse Current (µA) 70 60 50 40 30 20 10 0 0 0.5 1 TJ=75°C 1200 800 400 0 400 T J=125°C TJ=175°C T J=75°C T J=125°C TJ=175°C TJ=25°C 1.5 2 2.5 3 3.5 600 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 800 1000 1200 1400 1600 VR Reverse Voltage (V) 2800 C, Capacitance (pF) 2400 2000 1600 1200 800 400 0 1 July, 2006 10 100 VR Reverse Voltage 1000 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTM100A13SCG – Rev 2